Plasma-assisted Chemical Vapour Deposition (PECVD)
Three modified commercial PECVD-systems (Plasma Electronic) are operated in the research group for testing new molecular precursors for coating applications:
- Room Temperature PECVD
- Elevated Temperature PECVD (20 - 700 °C)
- Combined PECVD/PVD system with large chamber
These systems allow a homogeneous deposition of either metal oxides (e.g. SiO2, TiO2, FeOx), carbides, nitrides or composites on metal, ceramic, glass or polymer substrates.